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DMC4028SSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Symbol
V DSS
N-Channel - Q1
40
P-Channel - Q2
-40
Units
V
Gate-Source Voltage
(Note 5)
V GSS
? 20
? 20
V
(Notes 7 & 9)
7.2
5.2
Continuous Drain Current
V GS = 10V
T A = 70°C (Notes 7 & 9)
(Notes 6 & 9)
I D
5.5
5.4
4.2
4
A
(Notes 6 & 10)
6.5
4.8
Pulsed Drain Current
V GS = 10V
(Notes 7 & 9)
I DM
27.3
20.4
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Notes 7 & 9)
(Notes 8 & 9)
I S
I SM
3.35
27.3
3.15
20.4
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
N-Channel - Q1 P-Channel - Q2
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
(Notes 6 & 10)
P D
1.25
10
1.8
14.3
W
mW/°C
(Notes 7 & 9)
(Notes 6 & 9)
2.16
17.2
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R θ JA
R θ JL
T J, T STG
53
70
58
-55 to +150
53
°C/W
°C
Notes:
5. AEC-Q101 V GS maximum is ? 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (5), except the device is measured at t ? 10 sec.
8. Same as note (5), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC4028SSD
Document Number: D35041 Rev: 2 - 2
2 of 11
www.diodes.com
April 2013
? Diodes Incorporated
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